Product Description:
SiC Power Semiconductor is a silicon carbide semiconductor which is designed for electric power applications. It features low leakage, high frequency, low Rds(ON) and N type with excellent electrical and thermal performance. It can withstand high voltage and temperature, making it suitable for applications in extreme environments. The semiconductor also provides excellent thermal conductivity and switching performance, enabling improved efficiency and reliability. With its superior properties, SiC Power Semiconductor is an ideal choice for applications in the automotive, industrial and renewable energy sectors.
Technical Parameters:
| Parameter | Value |
| Product Name | SiC Power Semiconductor |
| Rds(ON) | Low Rds(ON) |
| Leakage | Low Leakage |
| Voltage | High Voltage |
| Type | N |
| Frequency | High Frequency |
| Efficiency | High Efficiency |
| Heat Dissipation | Great Heat Dissipation |
| Junction Capacitance | Low Junction Capacitance |
| Advantages | Stable Process And Reliable Quality |
| Material | Silicon Carbide Semiconductor |
Applications:
REASUNOS SiC Power Semiconductor is the ideal electric power semiconductor device for applications requiring high power, high frequency, and low junction capacitance. It is suitable for a broad range of consumer and industrial applications, including power converters, motor drives, industrial controllers, and lighting systems. This product is known for its reliable performance, dustproof, waterproof, and anti-static tubular packaging, and competitive price. The typical delivery time is 2-30 days, depending on the total quantity. We accept 100% T/T in Advance(EXW) as payment. Our factory has a Supply Ability of 5KK/month.
Support and Services:
SiC Power Semiconductor Technical Support and Services
SiC Power Semiconductor provides comprehensive technical support and services to customers worldwide. Our team of experienced engineers and technicians have expertise in all aspects of semiconductor design and fabrication, and are available to advise customers on best practices, troubleshoot technical issues, and help ensure product quality and reliability.
We provide a full range of technical services, including but not limited to:
- Design and implementation of custom SIC devices
- Testing and verification of SIC devices
- Troubleshooting of technical issues
- Product quality assurance
- Product reliability assurance
We also provide support for SIC product development, including:
- Assistance with device selection and evaluation
- Design assistance for custom applications
- Assistance with prototype development
- Assistance with product qualification
- Technical training and support
Our team is available to answer your questions and provide support on any SiC products. For more information, please contact us at support@sicpower.com.
Packing and Shipping:
SiC Power Semiconductor is packaged and shipped with the following procedures:
- The product is securely packaged in a protective box.
- The box is labeled with a barcode for tracking.
- The box is sealed with a tamper-resistant seal.
- The box is placed inside a larger shipping box.
- The larger shipping box is labeled with the product information.
- The larger shipping box is sealed with a tamper-resistant seal.
- The larger shipping box is shipped via a tracked delivery service.
FAQ:
Q: What is REASUNOS?
A: REASUNOS is a brand of power semiconductor products.
Q: Where is the place of origin for REASUNOS power semiconductor?
A: REASUNOS power semiconductor is from Guangdong, China.
Q: What is the price of REASUNOS power semiconductor?
A: The price of REASUNOS power semiconductor depends on the product, please contact us for more details.
Q: What is the packaging of REASUNOS power semiconductor?
A: REASUNOS power semiconductor is packaged with dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Q: How long does it take for delivery of REASUNOS power semiconductor?
A: Delivery time of REASUNOS power semiconductor is 2-30 days, depending on the total quantity.
